Paper
20 August 2009 Theoretical study on InxGa1-xN/Si hetero-junction solar cells
Jiangong Li, Fubin Li, Shuo Lin, Shuiku Zhong, Yiming Wei, Xianghai Meng, Xiaoming Shen
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Abstract
In this paper, we designed series of InxGa1-xN/Si hetero-junction solar cells. Key properties of InxGa1-xN/Si solar cells (single junction, double junctions) are simulated by using AMPS-1D software, including I-V characteristic, conversion efficiency, band structure etc. The InxGa1-xN/Si hetero-junction solar cells are compared with the performances of Si homo-junction solar cells. We also discuss some sensitive performance-related parameters in the preparation of InGaN/Si hetero-junction solar cells.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiangong Li, Fubin Li, Shuo Lin, Shuiku Zhong, Yiming Wei, Xianghai Meng, and Xiaoming Shen "Theoretical study on InxGa1-xN/Si hetero-junction solar cells", Proc. SPIE 7409, Thin Film Solar Technology, 740910 (20 August 2009); https://doi.org/10.1117/12.826088
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Cited by 8 scholarly publications.
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KEYWORDS
Solar cells

Indium gallium nitride

Silicon

Heterojunctions

Multijunction solar cells

Doping

Solar energy

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