20 August 2009 Theoretical study on InxGa1-xN/Si hetero-junction solar cells
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Abstract
In this paper, we designed series of InxGa1-xN/Si hetero-junction solar cells. Key properties of InxGa1-xN/Si solar cells (single junction, double junctions) are simulated by using AMPS-1D software, including I-V characteristic, conversion efficiency, band structure etc. The InxGa1-xN/Si hetero-junction solar cells are compared with the performances of Si homo-junction solar cells. We also discuss some sensitive performance-related parameters in the preparation of InGaN/Si hetero-junction solar cells.
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Jiangong Li, Jiangong Li, Fubin Li, Fubin Li, Shuo Lin, Shuo Lin, Shuiku Zhong, Shuiku Zhong, Yiming Wei, Yiming Wei, Xianghai Meng, Xianghai Meng, Xiaoming Shen, Xiaoming Shen, } "Theoretical study on InxGa1-xN/Si hetero-junction solar cells", Proc. SPIE 7409, Thin Film Solar Technology, 740910 (20 August 2009); doi: 10.1117/12.826088; https://doi.org/10.1117/12.826088
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