Pulse electrodeposited tin sulfide films for photovoltaic applications

Hirian B. M. Anaya; Ildefonso Z. Torres; Nini R. Mathews

doi:10.1117/12.826667

20 August 2009 Pulse electrodeposited tin sulfide films for photovoltaic applications

Hirian B. M. Anaya, Ildefonso Z. Torres, Nini R. Mathews

Proceedings Volume 7409, Thin Film Solar Technology; 740914 (2009) https://doi.org/10.1117/12.826667
Event: SPIE Solar Energy + Technology, 2009, San Diego, California, United States

Abstract

Tin sulfide (SnS) thin films of different thicknesses were deposited on TCO-coated glass substrates by pulse electrodeposition. The applied potential pulses were -0.95V (V_on) and +0.1V (V_off). Crystal structure of the deposited films was orthorhombic with lattice parameters similar to that of the mineral herzenbergite. A systematic increase in the band gap value was observed with increase in the film thickness. The dark conductivities of 60 and 510 nm thick films were 3.8 x 10^-8 Ω cm^-1 and 6.72 x10^-7 Ω cm^-1 respectively. The structural parameters such as lattice constants and grain size showed a systematic change with film thickness.

Citation Download Citation

Hirian B. M. Anaya, Ildefonso Z. Torres, and Nini R. Mathews "Pulse electrodeposited tin sulfide films for photovoltaic applications", Proc. SPIE 7409, Thin Film Solar Technology, 740914 (20 August 2009); https://doi.org/10.1117/12.826667

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