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20 August 2009 Minimizing shadow losses in III-nitride solar cells
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In this work InGa0.85N p-n homojunction solar cells were grown by MOCVD on GaN/sapphire substrates and fabricated using standard techniques. When illuminated from the backside, these devices showed 65.9% improvement in JSC and 4.4% improvement in VOC as compared to identical illumination from the front. These improvements arise from removal of the losses from electrical contact shading on the front of the devices (11.7% of active area), as well as significant optical absorption by the top current spreading layer. These improvements can likely be further enhanced by utilizing double-side polished wafers, which would eliminate scattering losses on the back surface. In addition to improving electrical characteristics of single cells, backside illumination is necessary for the realization of monolithic tandem InGaN solar cells.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew Melton, Balakrishnam Jampana, Robert Opila, Christiana Honsberg, Muhammad Jamil, and Ian Ferguson "Minimizing shadow losses in III-nitride solar cells", Proc. SPIE 7409, Thin Film Solar Technology, 740916 (20 August 2009);

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