Paper
20 August 2009 Growth and characterization of Cu2ZnSnS4 nanostructures using anodized aluminum as the growth mask
C. P. Chan, Z. Chen, H. Lam, C. Surya
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Abstract
In this paper we report the growth and characterization of Cu2ZnSnS4 (CZTS) nanostructures by co-electrodeposition technique using CuCl2, SnCl2 and ZnCl2 as sources and choline-based ionic liquid (IL) as the electrolyte. X-ray diffraction analysis of CZTS thin films grown by this technique indicated that the films have a kesterite structure with preferred grain orientation along (112). It is found that the energy bandgap of the material is about 1.49eV and the optical absorption coefficient is in the order of 104cm-1. Anodized aluminum oxide (AAO) was used as the growth mask for the growth of the nanostructures. Anodization of the aluminum foil was carried out in phosphoric acid solution at 1°C and a potential of 40 to 100V was applied. Sulfurization of the rods was performed in elemental sulfur vapor at 450°C for four hours using N2 as the ambient gas. Experimental results show that nanotubes were formed using the technique and the diameter can be well controlled by varying the applied potential in the anodization process. Electron diffraction experiments show that a mixture of single- and poly-crystalline nanostructures was found.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. P. Chan, Z. Chen, H. Lam, and C. Surya "Growth and characterization of Cu2ZnSnS4 nanostructures using anodized aluminum as the growth mask", Proc. SPIE 7411, Nanoscale Photonic and Cell Technologies for Photovoltaics II, 741108 (20 August 2009); https://doi.org/10.1117/12.828172
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Cited by 2 scholarly publications and 2 patents.
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KEYWORDS
Nanostructures

Absorption

Copper

Thin films

Tin

Zinc

Aluminum

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