20 August 2009 Transport and structural characterization of solution-processable doped ZnO nanowires
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Abstract
The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.
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Rodrigo Noriega, Rodrigo Noriega, Ludwig Goris, Ludwig Goris, Jonathan Rivnay, Jonathan Rivnay, Jonathan Scholl, Jonathan Scholl, Linda M. Thompson, Linda M. Thompson, Aaron C. Palke, Aaron C. Palke, Jonathan F. Stebbins, Jonathan F. Stebbins, Alberto Salleo, Alberto Salleo, } "Transport and structural characterization of solution-processable doped ZnO nanowires", Proc. SPIE 7411, Nanoscale Photonic and Cell Technologies for Photovoltaics II, 74110N (20 August 2009); doi: 10.1117/12.826204; https://doi.org/10.1117/12.826204
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