20 August 2009 Photonic band-engineering absorption enhancement of amorphous silicon for solar cells
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We report on enhancement of thin layer absorption through photonic band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show through simulation that an increase of the absorption by a factor of 1.5 is expected for a model film of 100nm of aSi. The proposal is then validated by an experimental demonstration, showing a 50% increase of the absorption of a demonstrator layer of 1μm thick aSi over a spectral range of 0.32 — 0.76μm. This shows new possibilities of increasing the efficiency of thin film photovoltaic cells. Photonic crystal based architecture are proposed and discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ounsi El Daif, Ounsi El Daif, Emmanuel Drouard, Emmanuel Drouard, Guillaume Gomard, Guillaume Gomard, Yeonsang Park, Yeonsang Park, Anne Kaminski, Anne Kaminski, Alain Fave, Alain Fave, Mustapha Lemiti, Mustapha Lemiti, Xavier Letartre, Xavier Letartre, Pierre Viktorovitch, Pierre Viktorovitch, Sungmo Ahn, Sungmo Ahn, Heonsu Jeon, Heonsu Jeon, Christian Seassal, Christian Seassal, "Photonic band-engineering absorption enhancement of amorphous silicon for solar cells", Proc. SPIE 7411, Nanoscale Photonic and Cell Technologies for Photovoltaics II, 74110O (20 August 2009); doi: 10.1117/12.825654; https://doi.org/10.1117/12.825654

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