There are many factors which are assumed to be concerned in the PV module deterioration. We have to understand
phenomena, modes, factors and mechanism, and then we have to build a stress acceleration method. As the first step of
this study, we conducted the forward voltage applying test and reverse biased breakdown test of c-Si PV cells. Then, we
extended the method into single-cell PV modules. After the breakdown test, we measured the I-V characteristics, and
then it was found that the shape of I-V curves are categorized into four types as follows: 1) decrease of shunt resistor, 2)
linear, 3) suspected normal and 4) the others. We will report some important experimental results and we propose an
idea for new acceleration method to PV module deterioration such as cell burn or interconnector failure.