Pyretic test and breakdown test for c-Si PV cells and single-cell PV modules

T. Doi; T. Yamada; K. Ikeda

doi:10.1117/12.826554

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20 August 2009 Pyretic test and breakdown test for c-Si PV cells and single-cell PV modules

T. Doi, T. Yamada, K. Ikeda

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Proceedings Volume 7412, Reliability of Photovoltaic Cells, Modules, Components, and Systems II; 74120X (2009) https://doi.org/10.1117/12.826554
Event: SPIE Solar Energy + Technology, 2009, San Diego, California, United States

Abstract

There are many factors which are assumed to be concerned in the PV module deterioration. We have to understand phenomena, modes, factors and mechanism, and then we have to build a stress acceleration method. As the first step of this study, we conducted the forward voltage applying test and reverse biased breakdown test of c-Si PV cells. Then, we extended the method into single-cell PV modules. After the breakdown test, we measured the I-V characteristics, and then it was found that the shape of I-V curves are categorized into four types as follows: 1) decrease of shunt resistor, 2) linear, 3) suspected normal and 4) the others. We will report some important experimental results and we propose an idea for new acceleration method to PV module deterioration such as cell burn or interconnector failure.

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T. Doi, T. Yamada, and K. Ikeda "Pyretic test and breakdown test for c-Si PV cells and single-cell PV modules", Proc. SPIE 7412, Reliability of Photovoltaic Cells, Modules, Components, and Systems II, 74120X (20 August 2009); https://doi.org/10.1117/12.826554

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