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27 August 2009 A crystalline alkylsilane dielectric surface-modification layer: a general strategy for high performance organic thin-film transistors
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Abstract
It has been well established that in organic thin film transistors (OTFTs), charge transport occurs within the first few monolayers of the semiconductor at the semiconductor/dielectric interface. Understanding and engineering the semiconductor-dielectric is therefore critical. Large discrepancies in performance, even with seemingly identical surface treatments, indicate that additional surface parameters must be identified and controlled in order to optimize OTFTs. Here, we used the Langmuir-Blodgett technique to study the effect of an octadecylsilane dielectric modification layer on OTFT performance. We found a crystalline, dense OTS monolayer promotes two-dimensional growth in a variety of organic semiconductors. Mobilities as high as 5.3 cm2/Vs and 2.2 cm2/Vs were demonstrated on crystalline OTS for C60 and pentacene, respectively. Finally, we also developed a simple, scalable spin-coating method to produce crystalline OTS. This work represents a significant step towards a general approach for morphological control of organic semiconductors which is directly linked to their thin film transistor performance.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ajay Virkar, Yutaka Ito, Stefan Mannsfeld, Michael Toney, and Zhenan Bao "A crystalline alkylsilane dielectric surface-modification layer: a general strategy for high performance organic thin-film transistors", Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 74170I (27 August 2009); https://doi.org/10.1117/12.825034
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