20 August 2009 Si integrated pyroelectric sensor array using epitaxial γ-Al2O3/Si substrates and epitaxial PZT thin films
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In this paper, we report that integrated pyroelectric infrared(IR) sensor array using surface micromachine technique with nMOS/nJFET devices on epitaxial γ-Al2O3/Si substrates has been successfully fabricated. Orientation and crystallinity control of pyroelectric and ferroelectric films are important to archive high sensitivity pyroelectric IR detector. We propose epitaxial γ-Al2O3 thin films as buffer layer on Si substrates to control them. Each pixel of fabricated IR sensor array has a thermally isolated Au/PZT(001)/Pt(001)/γ-Al2O3 stacked membrane detector, a low noise nJFET source follower and a switching nMOSFET. A voltage sensitivity of a fabricated detector is increased by forming thermal isolated structure. The fabricated sensor operated under a chopping frequency of 100 Hz. The RV, NEP and D* at 30 Hz are 1703 V/W, 7.22 × 10-11 WHz-1/2 and 1.38 × 108 cmHz1/2W-1, respectively. This sensor will have potential for Si integrated pyroelectric IR imager.
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Daisuke Akai, Daisuke Akai, Naoki Kawazu, Naoki Kawazu, Takahiro Sugai, Takahiro Sugai, Kazuaki Sawada, Kazuaki Sawada, Makoto Ishida, Makoto Ishida, } "Si integrated pyroelectric sensor array using epitaxial γ-Al2O3/Si substrates and epitaxial PZT thin films", Proc. SPIE 7419, Infrared Systems and Photoelectronic Technology IV, 741905 (20 August 2009); doi: 10.1117/12.824370; https://doi.org/10.1117/12.824370


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