27 August 2009 Development of silicon blocked impurity band detectors with integrated linear amplification
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Abstract
The observation of astrophysical objects in the mid-infrared requires Blocked Impurity Band (BIB) detectors based on n-doped Silicon. It is desirable to observe faint astronomical objects with such a detector, which can be achieved with a high Signal to Noise ratio. One possibility is an implemented Depleted P-channel Field Effect Transistor (DEPFET) Active Pixel Sensor (APS)1 on the BIB detector in order to be free of interconnection stray capacitance. A noise of 2 e- ENC and a current amplification of 300 pA per e- can be obtained at room temperature. These detectors operate at a temperature range from 6 K to 12 K. The DEPFET is operated under these conditions to investigate the functional principle of the detector. We show results of characteristic and dynamic measurements of the single pixel DEPFET at low temperature. We irradiate the DEPFET single pixel with x-rays originating from the nuclear decay of Fe55 and take a spectrum of the Kα- and Kβ-line. Uncomplete clear is identified with freeze-out of the signal charge into ionized shallow donor states in the heavily doped internal Gate of the DEPFET due to low thermal energy. We found a solution to emit the localized signal charges into the conduction band in order to ensure the transport from the internal Gate to the Clear contact.
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Valentin Fedl, Lothar Barl, Gerhard Lutz, Lothar Strüder, "Development of silicon blocked impurity band detectors with integrated linear amplification", Proc. SPIE 7419, Infrared Systems and Photoelectronic Technology IV, 74190M (27 August 2009); doi: 10.1117/12.826345; https://doi.org/10.1117/12.826345
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