High resolution imaging in UV band has a lot of applications in Defense and Commercial systems. The
shortest wavelength is desired for spatial resolution which allows for small pixels and large formats.
UVAPD's have been demonstrated as discrete devices demonstrating gain. The next frontier is to develop UV
APD arrays with high gain to demonstrate high resolution imaging.
We will discuss an analytical model that can predict sensor performance in the UV band using p-i-n or APD
detectors with and without gain and other detector and sensor parameters for a desired UV band of interest.
SNR's can be modeled from illuminated targets at various distances with high resolution under standard
MODTRAN atmospheres in the UV band and the solar blind region using detector arrays with unity gain
and with high gain APD along with continuous or pulsed UV lasers.
The performance can be determined by the signal level which results from the UV laser return energy (laser
power, beam divergence, target reflectance and atmospheric transmittance), the optics f/number, the response
of the detector (collection area, quantum efficiency, fill factor and gain), and the total noise which will be the
sum of the dark current noise, the scene noise, and the amplifier noise. We also discuss trades as a function
of detector response, dark current noise and the 1/f noise. We also present various approaches and device
designs that are being evaluated for developing APD's in wide band gap semiconductors. The paper also
discusses current state of the art in UV APD and the future directions for small unit cell size and gain in the