20 August 2009 (SiC)x(AlN)1-x solid-solution grown by physical vapor transport (PVT) method
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Abstract
(SiC)x (AlN)1-x Solid-solution films were deposited on on-axis Si-face 4H-SiC (0001) substrates by the physical vapor transport (PVT) method. Attempts were made to dope this film with Nd+3 for high power laser applications. SiC or its alloys will have better properties compared to oxides because of extremely high thermal conductivity and damage threshold. The doped film was characterized for its quality by X-ray, Photoluminescence (PL) and scanning electron microscope (SEM). X-ray rocking curves showed that crystals with FWHM of less than 200 arc seconds could be grown. The results were compared with previous results published on rare earth doped SiC material. Effect of annealing at high temperature on PL characteristics is also reported.
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N. B. Singh, N. B. Singh, B. Wagner, B. Wagner, A. Berghmans, A. Berghmans, D. J. Knuteson, D. J. Knuteson, S. McLaughlin, S. McLaughlin, D. Kahler, D. Kahler, M. King, M. King, J. Hedrick, J. Hedrick, G. M. Bates, G. M. Bates, } "(SiC)x(AlN)1-x solid-solution grown by physical vapor transport (PVT) method", Proc. SPIE 7420, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications III, 742004 (20 August 2009); doi: 10.1117/12.827260; https://doi.org/10.1117/12.827260
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