18 August 2009 Green LED development in polar and non-polar growth orientation
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Abstract
The green spectral region provides a formidable challenge for energy efficient light emitting diodes. In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 - 580 nm LEDs by rigorous defect reduction and thrive for alloy uniformity. We achieve best results in homoepitaxy on polar c-plane, and non-polar a-plane and m-plane bulk GaN. By the choice of crystal orientation, the dipole of piezoelectric polarization in the quantum wells can be optimized for highest diode efficiency. We report progress towards the goal of reduced efficiency droop at longer wavelengths.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Wetzel, Christian Wetzel, Mingwei Zhu, Mingwei Zhu, Yufeng Li, Yufeng Li, Wenting Hou, Wenting Hou, Liang Zhao, Liang Zhao, Wei Zhao, Wei Zhao, Shi You, Shi You, Christoph Stark, Christoph Stark, Yong Xia, Yong Xia, Michael DiBiccari, Michael DiBiccari, Theeradetch Detchprohm, Theeradetch Detchprohm, } "Green LED development in polar and non-polar growth orientation", Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742204 (18 August 2009); doi: 10.1117/12.829513; https://doi.org/10.1117/12.829513
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