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18 August 2009 Optical and structural properties of InN grown by HPCVD
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Abstract
The optical and structural properties of InN layers grown by 'High Pressure Chemical Vapor Deposition' (HPCVD) using a pulsed precursor approach have been studied. The study focuses on the effect of ammonia precursor exposure time and magnitude on the InN layer quality. The samples have been analyzed by X-ray diffraction, Raman scattering, infra red reflectance spectroscopy and photoluminescence spectroscopy. Raman measurements and X-ray diffraction showed the grown layers to be single phase InN of high crystalline quality. The E2(high) Raman mode showed FWHM's as small as 9.2 cm-1. The FWHM's of the InN(0002) X-ray Bragg reflex in the 2Θ-Ω- scans were around 350 arcsec, with rocking curve values as low as 1152 arcsec Photoluminescence features have been observed down to 0.7 eV, where the low energy cutoff might be due to the detector limitation. The analysis of the IR reflectance spectra shows that the free carrier concentrations are as low as as 3.3•1018 cm-3 for InN layers grown on sapphire substrates.
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M. Buegler, M. Alevli, R. Atalay, G. Durkaya, I. Senevirathna, M. Jamil, I. Ferguson, and N. Dietz "Optical and structural properties of InN grown by HPCVD", Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742218 (18 August 2009); https://doi.org/10.1117/12.828163
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