Unseeded growth of CdZnTe:In by THM technique

Utpal N. Roy; Stephen Weiller; Juergen Stein; Andrey Gueorguiev

doi:10.1117/12.829518

11 September 2009 Unseeded growth of CdZnTe:In by THM technique

Utpal N. Roy, Stephen Weiller, Juergen Stein, Andrey Gueorguiev

Proceedings Volume 7449, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI; 74490U (2009) https://doi.org/10.1117/12.829518
Event: SPIE Optical Engineering + Applications, 2009, San Diego, California, United States

Abstract

Travelling heater method (THM) has been a great success lately for the growth of large CdZnTe crystals. In this presentation, indium doped CdZnTe crystals have been grown adapting travelling heater method (THM) in vertical configuration, using three zone custom designed muffle furnace. Crystals have been grown with different ampoule diameter and size to study the grain growth. Seedless single crystalline CdZnTe:In crystals have been gown with 4 cm diameter weighing about 650 grams. Crystals have been characterized by near IR imaging, both microscopic and full wafer. The average resistivity along the length of the ingot was found to be about 10⁹ ohm-cm. A resolution 3.2% was obtained at 662 keV. The effect of annealing of the whole wafer in Cd-Zn alloyed vapor on the resistivity and on the Te precipitations will be discussed.

Citation Download Citation

Utpal N. Roy, Stephen Weiller, Juergen Stein, and Andrey Gueorguiev "Unseeded growth of CdZnTe:In by THM technique", Proc. SPIE 7449, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI, 74490U (11 September 2009); https://doi.org/10.1117/12.829518

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