Paper
11 September 2009 Effect of Te inclusions on internal electric field of CdMnTe gamma-ray detector
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Abstract
We studied two separate as-grown CdMnTe crystals by Infrared (IR) microscopy and Pockels effect imaging, and then developed an algorithm to analyze and visualize the electric field within the crystals' bulk. In one of the two crystals the size and distribution of inclusions within the bulk promised to be more favorable in terms of efficiency as a detector crystal. However, the Te inclusions were arranged in characteristic 'planes'. Pockels imaging revealed an accumulation of charges in the region of these planes. We demonstrated that the planes induced stress within the bulk of the crystal that accumulated charges, thereby causing non-uniformity of the internal electric field and degrading the detector's performance.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oluseyi Stephen Babalola, Aleksey E. Bolotnikov, Stephen U. Egarievwe, Anwar M. Hossain, Arnold Burger, and Ralph B. James "Effect of Te inclusions on internal electric field of CdMnTe gamma-ray detector", Proc. SPIE 7449, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI, 74491A (11 September 2009); https://doi.org/10.1117/12.830214
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Cited by 5 scholarly publications.
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KEYWORDS
Crystals

Tellurium

Sensors

Electric field sensors

Infrared imaging

Algorithm development

Gamma radiation

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