27 May 2009 SEMATECH mask program
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Proceedings Volume 7470, 25th European Mask and Lithography Conference; 747005 (2009) https://doi.org/10.1117/12.835796
Event: 25th European Mask and Lithography Conference, 2009, Dresden, Germany
Abstract
Defect free masks are a critical component to enable extreme ultraviolet lithography (EUVL). It is projected EUVL will be inserted for the 22nm hp node with a timeframe of 2012-2013 for leading IC manufacturers. To meet the goal of defect free masks, a concerted effort is required with emphasis on mask blank development and mask infrastructure readiness. With this in mind, SEMATECH mask program has been uniquely positioned to make important contributions to these areas. Together with several partners, an overall strategy has been defined focused on meeting EUVL mask requirements including setting mask standards and enabling the mask-making infrastructure. This paper will highlight the overview of key projects and accomplishments from the mask blank development program. It is critical that SEMATECH and its partners be ready to meet the overall pilot line defect density requirement of 0.04 defects/cm2 at 18nm defect sensitivity by the end of 2010. Although important progress has been made, much work remains to meet these challenging goals.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henry Yun, Abbas Rastegar, Patrick Kearney, Kevin Orvek, "SEMATECH mask program", Proc. SPIE 7470, 25th European Mask and Lithography Conference, 747005 (27 May 2009); doi: 10.1117/12.835796; https://doi.org/10.1117/12.835796
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