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27 May 2009 Registration metrology on double patterning reticles
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Proceedings Volume 7470, 25th European Mask and Lithography Conference; 74700N (2009) https://doi.org/10.1117/12.835185
Event: 25th European Mask and Lithography Conference, 2009, Dresden, Germany
Abstract
Double patterning is considered as an upcoming class of technologies for the 32nm node photolithography processes and beyond. Several different double patterning technologies have been published within the last years. The ability to use coarse patterns to define finer patterns offers an opportunity to achieve resolution below 30 nm by using optical DUV immersion lithography. The specifications for overlay registration on a pair of photomasks are expected to be much tighter than for standard photomasks. Especially the registration of related patterns, distributed on two separate photomasks, gives a new challenge to the metrology tools. Accordingly, we will present a new approach for overlay registration by the KLA-Tencor LMS IPRO4 system. Similar to the standard overlay evaluation, the new algorithms allow pairing up related sites on both photomasks for registration. Even though the sites are not located on the same coordinates, the KLA-Tencor LMS IPRO4 system is able to pair up each site on the second photomask to a dedicated site on the reference photomask. Thus the algorithm creates a set of common sites for the overlay registration. Results of this versatile method will be presented, showing the feasibility to several applications.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl-Heinrich Schmidt, Klaus-Dieter Röth, Frank Laske, Jochen Bender, Dieter Adam, and Oliver Ache "Registration metrology on double patterning reticles", Proc. SPIE 7470, 25th European Mask and Lithography Conference, 74700N (27 May 2009); https://doi.org/10.1117/12.835185
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