27 May 2009 EUV actinic defect inspection and defect printability at the sub-32-nm half-pitch
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Proceedings Volume 7470, 25th European Mask and Lithography Conference; 74700Y (2009) https://doi.org/10.1117/12.835196
Event: 25th European Mask and Lithography Conference, 2009, Dresden, Germany
Abstract
Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMATECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40~45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sungmin Huh, Patrick Kearney, Stefan Wurm, Frank Goodwin, Hakseung Han, Kenneth Goldberg, Iacopo Mochi, and Eric Gullikson "EUV actinic defect inspection and defect printability at the sub-32-nm half-pitch", Proc. SPIE 7470, 25th European Mask and Lithography Conference, 74700Y (27 May 2009); doi: 10.1117/12.835196; https://doi.org/10.1117/12.835196
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