23 September 2009 Defect printability analysis by lithographic simulation from high resolution mask images
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Abstract
We report the development of Mask-LMC for defect printability evaluation from sub-200nm wavelength mask inspection images. Both transmitted and reflected images are utilized, and both die-to-die and die-to-database inspection modes are supported. The first step of the process is to recover the patterns on the mask from high resolution T and R images by de-convolving inspection optical effects. This step uses a mask reconstruction model, which is based on rigorous Hopkins-modeling of the inspection optics, and is pre-determined before the full mask inspection. After mask reconstruction, wafer scanner optics and wafer resist simulations are performed on the reconstructed mask, with a wafer lithography model. This step leverages Brion's industry-proven, hardware-accelerated LMC (Lithography Manufacturability Check) technology1. Existing litho process models that are in use for Brion's OPC+ and verification products may be used for this simulation. In the final step, special detectors are used to compare simulation results on the reference and defect dice. We have developed detectors for contact CD, contact area, line and space CD, and edge placement errors. The detection results on test and production reticles have been validated with AIMSTM.
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George Chen, George Chen, James N. Wiley, James N. Wiley, Jen-Shiang Wang, Jen-Shiang Wang, Rafael C. Howell, Rafael C. Howell, Shufeng Bai, Shufeng Bai, Yi-Fan Chen, Yi-Fan Chen, Frank Chen, Frank Chen, Yu Cao, Yu Cao, Tadahiro Takigawa, Tadahiro Takigawa, Yasuko Saito, Yasuko Saito, Terunobu Kurosawa, Terunobu Kurosawa, Hideo Tsuchiya, Hideo Tsuchiya, Kinya Usuda, Kinya Usuda, Masakazu Tokita, Masakazu Tokita, Fumio Ozaki, Fumio Ozaki, Nobutaka Kikuiri, Nobutaka Kikuiri, Yoshitake Tsuji, Yoshitake Tsuji, } "Defect printability analysis by lithographic simulation from high resolution mask images", Proc. SPIE 7488, Photomask Technology 2009, 74880A (23 September 2009); doi: 10.1117/12.831475; https://doi.org/10.1117/12.831475
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