23 September 2009 Post exposure bake tuning for 32nm photomasks
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In optimizing e-beam resist process conditions for photomask lithography, the primary performance measurements for optimization are resolution, critical dimension uniformity (CDU), line edge roughness (LER), and linearity. Through technology nodes, one parameter that has consistently shown a critical impact on these factors is the post exposure bake (PEB) condition. With 32nm e-beam resist technologies having reduced temperature sensitivity, this paper investigates the current impact of PEB conditions. The PEB assessment will summarize the influence of PEB temperature, duration and environment flow on 32 nm positive tone resists by reporting and analyzing two of the primary performance measurements: CDU and LER.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. E. Zweber, A. E. Zweber, T. Komizo, T. Komizo, J. Levin, J. Levin, J. Whang, J. Whang, S. Nemoto, S. Nemoto, S. Kondo, S. Kondo, } "Post exposure bake tuning for 32nm photomasks", Proc. SPIE 7488, Photomask Technology 2009, 74880J (23 September 2009); doi: 10.1117/12.830123; https://doi.org/10.1117/12.830123

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