23 September 2009 Exposure results with four column cells in multicolumn EB exposure system
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Abstract
In the Mask D2I project at ASET, the authors assembled an electron beam exposure system to prove the concept ofmulti column cell with character projection technology. They performed beam calibrations in individual column cells to evaluate the resolution capabilities and stitching accuracies of the deflection fields of the system. Isolated 35nm line pattern and 60nm 1:1 line-and-space pattern were exposed in each column cell. Present stitching errors among the deflection fields were less than 15nm. We also evaluated stitching errors of patterns exposed by the different column cells. The stitching errors among the column cells were estimated to be less than 20nm. We are now investigating the origins of these errors to improve the exposure accuracies of the multi column cell system.
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Akio Yamada, Hiroshi Yasuda, Masaki Yamabe, "Exposure results with four column cells in multicolumn EB exposure system", Proc. SPIE 7488, Photomask Technology 2009, 74881F (23 September 2009); doi: 10.1117/12.829732; https://doi.org/10.1117/12.829732
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