23 September 2009 Inspection of 32nm imprinted patterns with an advanced e-beam inspection system
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Abstract
We used electron beam (e-beam) inspection (EBI) systems to inspect nano imprint lithography (NIL) resist wafers with programmed defects. EBI with 10nm pixel sizes has been demonstrated and capability of capturing program defects sized as small as 4nm has been proven. Repeating defects have been captured by the EBI in multiple die inspections to identify the possible mask defects. This study demonstrated the feasibility of EBI as the NIL defect inspection solution of 32nm and beyond.
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Hong Xiao, Hong Xiao, Long Ma, Long Ma, Fei Wang, Fei Wang, Yan Zhao, Yan Zhao, Jack Jau, Jack Jau, Kosta Selinidis, Kosta Selinidis, Ecron Thompson, Ecron Thompson, S. V. Sreenivasan, S. V. Sreenivasan, Douglas J. Resnick, Douglas J. Resnick, } "Inspection of 32nm imprinted patterns with an advanced e-beam inspection system", Proc. SPIE 7488, Photomask Technology 2009, 74881V (23 September 2009); doi: 10.1117/12.833419; https://doi.org/10.1117/12.833419
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