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30 September 2009 Efficient analysis of three dimensional EUV mask induced imaging artifacts using the waveguide decomposition method
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Abstract
This paper employs the Waveguide decomposition method as an efficient rigorous electromagnetic field (EMF) solver to investigate three dimensional mask-induced imaging artifacts in EUV lithography. The major mask diffraction induced imaging artifacts are first identified by applying the Zernike analysis of the mask nearfield spectrum of 2D lines/spaces. Three dimensional mask features like 22nm semidense/dense contacts/posts, isolated elbows and line-ends are then investigated in terms of lithographic results. After that, the 3D mask-induced imaging artifacts such as feature orientation dependent best focus shift, process window asymmetries, and other aberration-like phenomena are explored for the studied mask features. The simulation results can help lithographers to understand the reasons of EUV-specific imaging artifacts and to devise illumination and feature dependent strategies for their compensation in the optical proximity correction (OPC) for EUV masks. At last, an efficient approach using the Zernike analysis together with the Waveguide decomposition technique is proposed to characterize the impact of mask properties for the future OPC process.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feng Shao, Peter Evanschitzky, Tim Fühner, and Andreas Erdmann "Efficient analysis of three dimensional EUV mask induced imaging artifacts using the waveguide decomposition method", Proc. SPIE 7488, Photomask Technology 2009, 74882C (30 September 2009); https://doi.org/10.1117/12.833464
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