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29 September 2009 Study of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method
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Abstract
In this paper, we will report on our experimental results on the impact of inspection system optics on mask defect detection sensitivity. We evaluated the capability of detecting defects on the EUVL masks by using a new inspection tool (NPI6000EUVα) made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect mask with LR-TaBN absorber was used which had various sized opaque and clear extension defects on hp-180nm, hp-128nm, and hp-108nm line and space patterns. According to the analysis, to obtain optimum sensitivity for various types of defects, using both C- and P-polarized illumination conditions were found to be effective. At present, sufficient defect-detection sensitivity is achieved for opaque and clear extension defects in hp128nm (hp32nm at wafer). For hp108nm (hp27nm at wafer), using both C- and P- polarized illumination is effective. However, further developments in defect-detection sensitivity are necessary.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyuki Shigemura, Tsuyoshi Amano, Yukiyasu Arisawa, Osamu Suga, Hideaki Hashimoto, Masanori Saito, Masaya Takeda, Nobutaka Kikuiri, and Ryoichi Hirano "Study of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method", Proc. SPIE 7488, Photomask Technology 2009, 74882I (29 September 2009); https://doi.org/10.1117/12.829748
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