23 September 2009 Single-mask double-patterning lithography
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Abstract
This paper proposes shift-trim double patterning lithography (ST-DPL), a cost-effective method for achieving 2× pitchrelaxation with a single photomask (especially at polysilicon layer). The mask is re-used for the second exposure by applying a translational mask-shift. Extra printed features are then removed using a non-critical trim exposure. The viability of ST-DPL is demonstrated. The proposed method has many advantages with virtually no area overhead (< 0.3% standard-cell area): (1) cuts mask-cost to nearly half that of standard-DPL, (2) reduces overlay errors between the two patterns and can virtually eliminate it in some process implementations, (3) alleviates the bimodal problem in doublepatterning, and (4) enhances throughput of first-rate scanners. We implement a small 45nm standard-cell library and small benchmark designs with ST-DPL to illustrate its viability.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rani S. Ghaida, George Torres, Puneet Gupta, "Single-mask double-patterning lithography", Proc. SPIE 7488, Photomask Technology 2009, 74882J (23 September 2009); doi: 10.1117/12.833190; https://doi.org/10.1117/12.833190
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