23 September 2009 Feasibility study of the approach to flare, shadowing, optical and process corrections for EUVL OPC
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The switch from 193i to EUV Photolithography will bring some fundamental changes in exposure. The flare levels of an EUV machine are significantly higher compared with standard 193i machines. Moreover shadow effects on the reticle are not equivalent to 193i. It is inevitable that these fundamentals require modifications in the Optical Proximity Correction (OPC) flow. In this paper in collaboration with ASML BRION the critical enabling steps of the Mask Data Preparation (MDP) for EUVL, Flare, Shadowing and Optical and Process Corrections (OPC), are investigated. We measured the needs of the EUV MDP flow against the capabilities of a state-of-the art OPC flow built for 193i. Adaptations are being made to implement features which are currently not available in a 193i based flow. We present a feasibility study of the Model Based approach to the EUV OPC on a wide selection of features. Also we demonstrate simulations and verification of the EUV modeling capabilities of the TachyonTM with various levels and ranges of flare and prove the applicability of the reviewed approach to the process development for the 27nm EUV node.. We also evaluated the accuracy of the EUV OPC modeling and expected OPC corrections on the reviewed selection of clips as a substantial part of the overall CDU budget. Finally an overall EUV OPC flow as a manufacturable solution based on the Tachyon's predictions and ASML's knowledge of Photolithography was discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Nikolsky, Peter Nikolsky, Natalia Davydova, Natalia Davydova, Koen van Ingen Schenau, Koen van Ingen Schenau, Paul van Adrichem, Paul van Adrichem, Eric Hendrickx, Eric Hendrickx, Gian Lorusso, Gian Lorusso, Jiong Jiang, Jiong Jiang, Wei Liu, Wei Liu, Huayu Liu, Huayu Liu, } "Feasibility study of the approach to flare, shadowing, optical and process corrections for EUVL OPC", Proc. SPIE 7488, Photomask Technology 2009, 74882N (23 September 2009); doi: 10.1117/12.833527; https://doi.org/10.1117/12.833527


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