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23 September 2009 Reducing the shot counts of mask writing with OPC by extracting repeating patterns
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In May 2006, the Mask Design, Drawing, and Inspection Technology Research Department (Mask D2I) at the Association of Super-Advanced Electronics Technologies (ASET) launched 4-year program for reducing mask manufacturing cost and TAT by concurrent optimization of MDP, mask writing, and mask inspection [1]. One area of the project focuses on clever utilization of repeating patterns where the repeating patterns are extracted from the mask data after the layout has been run through its OPC process. The data thus obtained is then used as Character Projection (CP) for reducing the shot counts during the subsequent electron beam writing step. We have developed a software that can extract repeated pattern from mask data. This software has been verified by using actual device production data obtained from the member companies of MaskD2I. In this paper, we will address the effect of reducing the shot counts on TAT in mask writing. In order to evaluate the usefulness of extraction repeating patterns, we will also show the result of extraction common repeating patterns from multiple masks and the investigation result of EB proximity effect on CP drawing.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Shoji, Tadao Inoue, and Masaki Yamabe "Reducing the shot counts of mask writing with OPC by extracting repeating patterns", Proc. SPIE 7488, Photomask Technology 2009, 74882W (23 September 2009);

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