23 September 2009 A study of contour image comparison measurement for photomask patterns of 32 nm and beyond
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In order to analyze small reticle defects quantitatively, we have developed a function to measure differences in two patterns using contour data extracted from SEM images. This function employs sub-pixel contour data extracted with high accuracy to quantify a slight difference by ΔCD and ΔArea. We assessed the measurement uncertainty of the function with a test mask and compared the sizes of programmed defects by each of conventional and proposed methods. We have also investigated a correlation between measured minute defects in high MEEF (Mask Error Enhancement Factor) regions and aerial images obtained by AIMS (Aerial Image Measurement System) tool. In this paper, we will explain the Contour Comparison Measurement function jointly developed by Toppan and Advantest and will show its effectiveness for photomask defect analyses.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Isao Yonekura, Isao Yonekura, Hidemitsu Hakii, Hidemitsu Hakii, Keishi Tanaka, Keishi Tanaka, Masaru Higuchi, Masaru Higuchi, Yoshiaki Ogiso, Yoshiaki Ogiso, Toshihide Oba, Toshihide Oba, Toshimichi Iwai, Toshimichi Iwai, Jun Matsumoto, Jun Matsumoto, Takayuki Nakamura, Takayuki Nakamura, } "A study of contour image comparison measurement for photomask patterns of 32 nm and beyond", Proc. SPIE 7488, Photomask Technology 2009, 748831 (23 September 2009); doi: 10.1117/12.833405; https://doi.org/10.1117/12.833405

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