21 October 2009 Thermal shock of silicon-based materials under multi-pulsed intense laser radiation
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Proceedings Volume 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering; 74932B (2009); doi: 10.1117/12.841222
Event: Second International Conference on Smart Materials and Nanotechnology in Engineering, 2009, Weihai, China
Abstract
The silicon-based materials are widely used in MEMS. In this article, the thermal shock property of silicon-based materials under the multi-pulsed laser irradiation is studied and theoretical deduction under a relative numerical case is performed. Based on the non-Fourier conduction and the thermo-elastic theories, theoretical expressions between temperature and thermal stress of a silicon-based material under the multi-pulse heat flow are deduced; regularities among inner surplus temperature, time and depth in a silicon-based target and corresponding boundary are studied; further more, curves of inner thermal stress in cases of different relation time are obtained by using the finite difference method. As results indicated, under the multi-pulsed laser irradiation, the temperature curves present a delayed character in different section away from the boundary, which are closely connected with the relaxation time. In the non-Fourier theoretical solution, the front of the stress wave is very steep and presents an obvious thermal shock property. The conclusion may be helpful to the micro-fabrication technology in the fields of MEMS.
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Haiming Huang, Xiaoliang Xu, "Thermal shock of silicon-based materials under multi-pulsed intense laser radiation", Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74932B (21 October 2009); doi: 10.1117/12.841222; https://doi.org/10.1117/12.841222
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KEYWORDS
Silicon

Laser irradiation

Microelectromechanical systems

Semiconductor lasers

Pulsed laser operation

Finite difference methods

Laser ablation

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