20 October 2009 Preparation, microstructure characterization and dielectric properties of relaxor ferroelectric thick films
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Proceedings Volume 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering; 74935G (2009) https://doi.org/10.1117/12.840379
Event: Second International Conference on Smart Materials and Nanotechnology in Engineering, 2009, Weihai, China
Abstract
The phase structure and the microstructure of pyrochlor-free (1-x)PMN-xPT (x=0.2~0.4) relaxor ferroelectric thick films prepared by an electrophoretic deposition on Pt substrate were investigate by XRD and SEM. The dielectric permittivity maximum εm (at 1 kHz) were in the range of 18000~26500. Relaxor-like behavior was clearly demonstrated in PMN-PT thick-films. Deviation from Curie-Weiss behavior and temperature evolution of the local order parameter were found in the films. The degree of relaxation obtained from the modified Curie-Weiss law strongly suggests the relaxor behavior.
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Huiqing Fan, Jin Chen, "Preparation, microstructure characterization and dielectric properties of relaxor ferroelectric thick films", Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74935G (20 October 2009); doi: 10.1117/12.840379; https://doi.org/10.1117/12.840379
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