20 October 2009 Preparation, microstructure characterization and dielectric properties of relaxor ferroelectric thick films
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Proceedings Volume 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering; 74935G (2009) https://doi.org/10.1117/12.840379
Event: Second International Conference on Smart Materials and Nanotechnology in Engineering, 2009, Weihai, China
Abstract
The phase structure and the microstructure of pyrochlor-free (1-x)PMN-xPT (x=0.2~0.4) relaxor ferroelectric thick films prepared by an electrophoretic deposition on Pt substrate were investigate by XRD and SEM. The dielectric permittivity maximum εm (at 1 kHz) were in the range of 18000~26500. Relaxor-like behavior was clearly demonstrated in PMN-PT thick-films. Deviation from Curie-Weiss behavior and temperature evolution of the local order parameter were found in the films. The degree of relaxation obtained from the modified Curie-Weiss law strongly suggests the relaxor behavior.
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Huiqing Fan, Huiqing Fan, Jin Chen, Jin Chen, } "Preparation, microstructure characterization and dielectric properties of relaxor ferroelectric thick films", Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74935G (20 October 2009); doi: 10.1117/12.840379; https://doi.org/10.1117/12.840379
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