21 October 2009 Highly red luminescence properties from ternary ZnCdTe quantum dots
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Proceedings Volume 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering; 74935W (2009); doi: 10.1117/12.839808
Event: Second International Conference on Smart Materials and Nanotechnology in Engineering, 2009, Weihai, China
Abstract
This paper reports the synthesis of ternary ZnCdTe quantum dots (QD) system with highly luminescent in the red region. The ternary QD system was prepared by quick injection of trioctylphosphine telluride (TOPTe) into a reactor that contains a hot mixed cadmium and zinc precursors, trioctylphosphine oxide and oleic acid at temperature of as low as 300°C. After the injection of TOPTe, the reaction was left undisturbed for a period of time to facilitate the growth of QDs and then quenched the reaction at a certain period of time. Photoluminescence analysis found that the ZnCdTe QDs exhibited highly luminescent properties with the quantum yield was calculated as high as ca. 60%. The emission wavelength was found to be in the range of 640 to 675 nm. It was also found that the QDs showed a relatively narrow spectral width, namely ca. 28 nm, reflecting a narrow quantum dots size distribution. Owing to their interesting photoluminescence properties, the ternary ZnCdTe QDs should find an extensive used in light-emitting diode, solar cell, laser and biolabelling.
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Norhayati Abu Bakar, Akrajas Ali Umar, Muhamad Mat Salleh, Muahamad Yahaya, Burhanuddin Yeop Majlis, "Highly red luminescence properties from ternary ZnCdTe quantum dots", Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74935W (21 October 2009); doi: 10.1117/12.839808; https://doi.org/10.1117/12.839808
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KEYWORDS
Zinc

Luminescence

Quantum dots

Cadmium

Quantum efficiency

Light emitting diodes

Binary data

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