20 October 2009 Nitrogen dioxide sensing properties and mechanism of nickel phthalocyanine film
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Proceedings Volume 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering; 749366 (2009) https://doi.org/10.1117/12.840319
Event: Second International Conference on Smart Materials and Nanotechnology in Engineering, 2009, Weihai, China
Abstract
Nickel phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based nickel phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the current of nickel phthalocyanine film increase obviously from 3×10-2μA to 1.08μA as the NO2 concentration increases from 0 ppm to 160 ppm. However, the sensitivity of NiPc thin film gas sensor nearly keeps a constant of 0.94 (average) between 10 ppm and 120 ppm with increasing NO2 concentration. The best working temperature of the gas sensor is 50°C for NO2 gas concentrations of 10 ppm, which is much lower than that of general metal oxide gas sensor.
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Cheng-jun Qiu, Cheng-jun Qiu, Yan-wei Dou, Yan-wei Dou, Wei Qu, Wei Qu, Yan-mei Sun, Yan-mei Sun, } "Nitrogen dioxide sensing properties and mechanism of nickel phthalocyanine film", Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 749366 (20 October 2009); doi: 10.1117/12.840319; https://doi.org/10.1117/12.840319
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