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3 December 2009 Glass doped with semiconductor nanoparticles for optical devices
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Proceedings Volume 7499, Seventh Symposium Optics in Industry; 749917 (2009)
Event: Seventh Symposium on Optics in Industry, 2009, Guadalajara, Jalisco, Mexico
We report the fabrication of glass multilayer doped with semiconductor nanoparticles. The glass matrix was fabricated by Plasma Enhanced Chemical Deposition (PECVD using tetramethoxysilane (TMOS) as precursor. The RF power was supplied by a RF-150 TOKYO HI-Power operating at 13.56 MHz and coupled to the RF electrodes through a matching box. The nanoparticles were grown by pulsed laser deposition (PLD) of a PbTe target using the second harmonic of a Q-Switched Quantel Nd:YAG laser in high purity inert gas atmosphere. The influence of gas and background pressure and in the nanoparticle size and size distribution is studied. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy(HRTEM), grazing-incidence smallangleX-ray scattering (GISAXS).
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E. Rodriguez, L. Ponce, M. Arronte, E. de Posada, G. Kellerman, C. L. César, and L. C. Barbosa "Glass doped with semiconductor nanoparticles for optical devices", Proc. SPIE 7499, Seventh Symposium Optics in Industry, 749917 (3 December 2009);


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