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20 September 1987 "Progress In Schottky-Barrier IR Imagers"
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Proceedings Volume 0750, Infrared Systems and Components; (1987) https://doi.org/10.1117/12.939867
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
Schottky-barrier focal plane arrays are the only infrared imagers that are fabricated by the well established silicon VLSI process. Therefore, at the present time they repre-sent the most mature technology for large-area high-density focal plane arrays for many SWIR (1 to 3 μm) and MWIR (3 to 5 μm) applications.1-27 - PtSi Schottkybarrier detectors (SBDs) were developed for operation in the MWIR band at a temperature of 77 to 80K. These SBDs can be designed for operation at 77K with a dark current density in the range of 1.0 to 20 nA/cm2. Pd2Si SBDs were developed for operation with passive cooling at 120K in the SWIR band. Although the PtSi SBDs have rather low quantum efficiency (0.5 to 1.0% at 4.0 μm), however, because of very low readout noise, the IR-CCD imagers with PtSi SBDs are capable of 300K thermal imaging with a noise equivalent (NEAT) of less than 0.1K. The noise floor of the SBD arrays is limited by the SBD dark current shot noise.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Walter F. Kosonocky ""Progress In Schottky-Barrier IR Imagers"", Proc. SPIE 0750, Infrared Systems and Components, (20 September 1987); https://doi.org/10.1117/12.939867
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