Paper
31 December 2009 Studies of femtosecond laser induced damage of HfO2 thin film in atmospheric and vacuum environments
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Abstract
The single pulse femtosecond laser induced damage threshold (LIDT) of hafnia and silica films is not affected by the ambient gas pressure. In vacuum, the multiple pulse LIDT drops to ~10% (~10%) of its atmospheric value for hafnia (silica). The water vapor content of the ambient gas was found to control the change in the LIDT. The LIDT of bulk fused silica surfaces did now show any dependence on the ambient gas pressure. Hydrocarbons (toluene) did not change the multiple pulse LIDT for Hafnia films
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. N. Nguyen, L. A. Emmert, W. Rudolph, D. Patel, E. Krous, C. S. Menoni, and M. Shinn "Studies of femtosecond laser induced damage of HfO2 thin film in atmospheric and vacuum environments", Proc. SPIE 7504, Laser-Induced Damage in Optical Materials: 2009, 750403 (31 December 2009); https://doi.org/10.1117/12.836505
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Cited by 8 scholarly publications.
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KEYWORDS
Silica

Nitrogen

Femtosecond phenomena

Thin films

Ionization

Laser damage threshold

Dielectrics

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