Paper
31 December 2009 Laser conditioning process combining N/1 and S/1 programs to improve the damage resistance of KDP crystals
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Abstract
Multi-parametric experiments were carried out to investigate laser conditioning efficiency for KDP crystals as a function of fluence step, laser fluence, and S/1 pulse sequence by using a tripled Nd:YAG laser (355nm) with a pulsewidth of about 6 ns. It was disclosed that the laser conditioning enhancement was mainly depended on the maximum fluence which was reached in conditioning process. Compared with increasing steps, higher fluence can more efficiently improve the laser damage resistance capability. Moreover, S/1 pulse sequence was better for stabilizing defects and could enhance the damage threshold further. Based on the results, an optimized laser conditioning process was put forward. Firstly, an N/1 conditioning program can be used to achieve the maximum fluence without causing damage. Secondly, an S/1 program shall be adopted to further enhance the damage threshold with the maximum fluence which is achieved in the foregoing N/1 program. After the laser conditioning process, damage tests showed that laser damage threshold was almost doubled. The model of laser conditioning was discussed on the basis of the size reduction of absorber by the local decomposition of the surrounding material. And then the dependence of conditioning efficiency on the process parameters was analyzed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuanan Zhao, Guohang Hu, Jianda Shao, Xiaofeng Liu, Hongbo He, and Zhengxiu Fan "Laser conditioning process combining N/1 and S/1 programs to improve the damage resistance of KDP crystals", Proc. SPIE 7504, Laser-Induced Damage in Optical Materials: 2009, 75041L (31 December 2009); https://doi.org/10.1117/12.836187
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Cited by 6 scholarly publications.
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KEYWORDS
Crystals

Laser crystals

Particles

Laser induced damage

Resistance

Laser processing

Laser damage threshold

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