Using excellent host of Gadolinium Vanadate (GdVO4), Tm3+:GdVO4 laser has many advantages, such as high heat conductivity, little thermal effect, large stimulated emission cross-section, and low laser oscillation threshold. And due to its stronger and broader absorption spectrum in the 800 nm region, highly-efficient AlGaAs laser-diode (LD) can be adopted as pump source. In this paper, the properties of various kinds of Tm3+-doped laser crystals are compared in the first place. Then by describing the energy transmission process of Tm3+-doped system at the 2 μm band and establishing
the quasi-three-level rate equation, we obtain the expression of threshold pump power and slope efficiency. Moreover,
considering thermal lens effect of GdVO4, the three-mirror folded resonator is analysed using the method of transmission
matrix and optimized numerically. A low-threshold, high-power, and good-stability LD double-end pumping
Tm3+:GdVO4 solid-state laser is designed by the guidance of the optimized resonator parameters. We obtained a
fundamental mode 1920 nm laser output.