Translator Disclaimer
Paper
23 November 2009 Poly(3-hexylthiophene) based organic field-effect transistor as NO2 gas sensor
Author Affiliations +
Abstract
A bottom contact organic field effect transistor (OFET) was fabricated with poly(3-hexylthiophene) (P3HT) as the channel semiconductor. P3HT thin film was deposited onto a SiO2/n-Si substrate by spin coating and electrical characteristics of the P3HT-FET were investigated in a nitrogen flux. A change in the saturation drain-source current (IDS) was observed when device was exposed to different concentrations of nitrogen dioxide (NO2) gas. It was found that the variation in the IDS was remarkable with NO2 injected in a short time.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bo Liu, Guangzhong Xie, and Xiaosong Du "Poly(3-hexylthiophene) based organic field-effect transistor as NO2 gas sensor", Proc. SPIE 7508, 2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications, 750813 (23 November 2009); https://doi.org/10.1117/12.837911
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top