23 November 2009 Fluorescence spectrometry of N-doped ZnO films
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Abstract
The different N-doped ZnO thin films were grown by RF magnetron sputtering on the glass substrates by changing the ratio of O2 to N2.The XRD and photoluminescence (PL) spectra were measured. The results show that the intensity and positions of these PL peaks are changed with nitrogen content. There are two peaks at 374nm and 391nm under fluorescence spectrum when the ratio of Ar:O2:N2 is 15:7:8. The fluorescence peak located at 374nm has the characteristic of p-type ZnO films.
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X. X. He, H. Q. Li, H. X. Shen, "Fluorescence spectrometry of N-doped ZnO films", Proc. SPIE 7508, 2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications, 75081G (23 November 2009); doi: 10.1117/12.838181; https://doi.org/10.1117/12.838181
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