26 October 2009 Inductively coupled plasma etching of SOI and its applications in submicron optical waveguide devices
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Abstract
SOI promises a good platform for dense integration of optical devices. However, as dimensions scale down, propagation losses mainly caused by the scattering loss at sidewall had been serious problems. ICP etching of SOI is proved to be an available anisotropic etch technique to make submicron optical waveguide devices. With the help of e-beam lithography, We fabricated Single-mode submicron rib SOI waveguide with propagation loss as low as 1.2 dB/mm. Examples of SOI optical waveguide devices are also presented, such as sharp bends and ring resonators with a quality factor larger than 50,000.
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Zhongchao Fan, Weihua Han, Fuhua Yang, Xuejun Xu, Qingzhong Huang, Xi Xiao, Yu Zhu, Yuntao Li, Zhiyong Li, Yude Yu, Jinzhong Yu, "Inductively coupled plasma etching of SOI and its applications in submicron optical waveguide devices", Proc. SPIE 7516, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, 75160B (26 October 2009); doi: 10.1117/12.843461; https://doi.org/10.1117/12.843461
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