26 October 2009 Simulation of a 1550-nm InGaAsP-InP transistor laser
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Abstract
A 1550 InGaAsP-InP multiple-quantum-well (MQW) transistor laser is numerically modeled. The proposed structure has a deep-ridge waveguide and asymmetric doping profile in the base (i.e. only the part below QWs of the base is doped) which provides good optical and electrical confinement and effectively reduces the lateral leakage current and optical absorption. The important physical models and parameters are discussed and validated by modeling a conventional ridge-waveguide laser diode and comparing the results with the experiment. The simulation results of the transistor laser demonstrate a low threshold (< 10 mA) and a > 25 % slope efficiency with the current gain of 2 ~ 4. The optical saturation and voltage-controlled operation are also demonstrated.
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Wei Shi, Wei Shi, Zigang Duan, Zigang Duan, Raha Vafaei, Raha Vafaei, Nicolas Rouger, Nicolas Rouger, Behnam Fariji, Behnam Fariji, Lukas Chrostowski, Lukas Chrostowski, } "Simulation of a 1550-nm InGaAsP-InP transistor laser", Proc. SPIE 7516, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, 75160P (26 October 2009); doi: 10.1117/12.841564; https://doi.org/10.1117/12.841564
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