Effects of O2/Ar ratio and UV illumination on the properties of radio frequency sputtered TeOx thin films

Xiaoyong Wang; Yongyou Geng; Donghong Gu

doi:10.1117/12.845411

23 October 2009 Effects of O₂/Ar ratio and UV illumination on the properties of radio frequency sputtered TeO_x thin films

Xiaoyong Wang, Yongyou Geng, Donghong Gu

Author Affiliations +

Proceedings Volume 7517, Photonics and Optoelectronics Meetings (POEM) 2009: Optical Storage and New Storage Technologies; 751706 (2009) https://doi.org/10.1117/12.845411
Event: Photonics and Optoelectronics Meetings 2009, 2009, Wuhan, China

Abstract

Tellurium oxide (TeO_x) thin films have been prepared by rf reactively sputtering deposition by using a tellurium target under Ar-O₂ gas mixture. The effect of O₂/Ar ratio on the structure and optical properties was investigated by XRD, FTIR and optical transmission measurement. With increasing the O₂/Ar ratio the optical band gap of thin films increased from 0.59eV to 0.87eV, but the Urbach energy firstly decreased, then increased. After UV illumination, the blue and red shifts of absorption edge were observed. And the annealing of as-deposited films also was done. It was proposed that the blue and red shifts may be related with the Urbach energy. All the results can be attributed to the rearrangement of bonding network with the variation of stoichiometry of tellurium oxide films.

Citation Download Citation

Xiaoyong Wang, Yongyou Geng, and Donghong Gu "Effects of O₂/Ar ratio and UV illumination on the properties of radio frequency sputtered TeO_x thin films", Proc. SPIE 7517, Photonics and Optoelectronics Meetings (POEM) 2009: Optical Storage and New Storage Technologies, 751706 (23 October 2009); https://doi.org/10.1117/12.845411

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