GaP single crystal layers grown on GaN by MOCVD

Shuti Li; Jianxing Cao; Guanghan Fan; Yong Zhang; Shuwen Zheng; Huiqing Sun; Jun Su

doi:10.1117/12.840796

12 October 2009 GaP single crystal layers grown on GaN by MOCVD

Shuti Li, Jianxing Cao, Guanghan Fan, Yong Zhang, Shuwen Zheng, Huiqing Sun, Jun Su

Proceedings Volume 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies; 75180F (2009) https://doi.org/10.1117/12.840796
Event: Photonics and Optoelectronics Meetings 2009, 2009, Wuhan, China

Abstract

The GaP layers grown on GaN layer by Metalo-organic chemical vapour deposition (MOCVD) were studied. The results show that the GaP layers are single crystals when the growth temperature varied from 350°C to 500°C. However, the crystal quality of GaP grown at low temperature is not good. Using a 40 nm GaP buffer layer grown at 400°C, the crystal quality of GaP grown at 680°C improves evidently. The p-type GaP layers with hole carrier concentration of 4.2×10¹⁸ cm^-3 were obtained by CP₂Mg doping.

Citation Download Citation

Shuti Li, Jianxing Cao, Guanghan Fan, Yong Zhang, Shuwen Zheng, Huiqing Sun, and Jun Su "GaP single crystal layers grown on GaN by MOCVD", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75180F (12 October 2009); https://doi.org/10.1117/12.840796

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