12 October 2009 Study on performance of p-Si thin film fabricated by aluminum induced lateral crystallization at low temperature
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Abstract
Nowadays, low temperature polycrystalline silicon thin film transistor (poly-Si TFT) has been the most popular subject in active matrix liquid display (AMLCD) and active matrix organic light emitting display (AMOLED). Relative to the other crystallization technique, aluminum-induced crystallization have certain advantages in lower temperature, and of course, lower cost than any other methods. This paper gives a research on the performance of poly-Si thin film fabricated by aluminum-induced electric field enhancing lateral crystallization at low temperature (<600°C). Raman spectra, X-ray diffraction and scan electron microscope were used to analyze the crystallization state, crystal structure and surface morphology of the poly-Si thin film. Results show that the poly-Si thin film has good crystallinity, and the electric field has the effect of enhancing the crystallization when direct current electric voltage is added to the film during annealing. In addition to this, the metal aluminum induced crystallization was monitored in the whole progress when Al was diffusing into the a-Si thin film by measuring resistance of crystallizing thin film. The poly-Si thin film fabricated by this low temperature electric enhancing aluminum-induced crystallization technique was obtained. The results show that it is suitable for P-Si TFTs which is widely used in AMLCD and AMOLED.
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Qiankun Chen, Qiankun Chen, Xiangbin Zeng, Xiangbin Zeng, Yu Zeng, Yu Zeng, Luo Liu, Luo Liu, Yanyan Yang, Yanyan Yang, } "Study on performance of p-Si thin film fabricated by aluminum induced lateral crystallization at low temperature", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751810 (12 October 2009); doi: 10.1117/12.841228; https://doi.org/10.1117/12.841228
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