12 October 2009 The evaluation and measurement of AlGaN epitaxial layer with high Al mole fraction
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The epitaxial layer quality of AlxGa1-xN (x>0.6) on sapphire substrate grown by metal organic chemical vapor deposition (MOCVD) needs to be further improved. In this paper, we evaluated the properties of defects, lattice mismatch between epitaxial layer and substrate, crystal quality and conductivity for these high Al mole fraction materials from the viewpoint of fabricating high performance solar blind detectors by comprehensive utilizing various undamaged measurements. The measurement of transmission spectrum was used to evaluate the absorption edge, band gap, mole fraction of Al content, hetero-epitaxial interface, and transmissivity in the ultraviolet spectral range. X-ray diffraction (XRD) was used to measure the component of the AlGaN material, uniformity of the material and crystal quality. The conductivity of the surface layer of the AlGaN film material was obtained by using high precision current-voltage curve measurement. In short, the material quality, optical and electrical properties, and uniformity for high Al mole fraction AlGaN epitaxial layers were qualitatively or quantitatively measured and analyzed. These works lay the foundation for manufacturing high performance solar blind ultraviolet detectors based on high Al mole fraction AlGaN epitaxial materials on sapphire substrate.
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Zhao Meng, Zhao Meng, Libo Yu, Libo Yu, Xiao Li, Xiao Li, Qibin Liu, Qibin Liu, Huiqiang Duan, Huiqiang Duan, Chenhui Yu, Chenhui Yu, Changqing Chen, Changqing Chen, } "The evaluation and measurement of AlGaN epitaxial layer with high Al mole fraction", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751813 (12 October 2009); doi: 10.1117/12.840465; https://doi.org/10.1117/12.840465


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