The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method

Qian Feng; Li-mei Li; Yue Hao; Zhi-wei Bi

doi:10.1117/12.845422

12 October 2009 The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method

Qian Feng, Li-mei Li, Yue Hao, Zhi-wei Bi

Proceedings Volume 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies; 751814 (2009) https://doi.org/10.1117/12.845422
Event: Photonics and Optoelectronics Meetings 2009, 2009, Wuhan, China

Abstract

A multi-step rapid thermal annealing process of Ti/Al/Ni/Au was investigated for ohmic contact of AlGaN/GaN high electron mobility transistor(HEMT).The samples were studied by Transmission Line Model(TLM),Scanning Electron Microscopy(SEM) and Auger Electron Spectroscopy(AES) measurements. By the multi-step annealing process, the specific contact resistance was decreased and the surface morphology was improved. The AES measurements showed that the limitation indiffusion of Au and outdiffusion of Al were account for the surface morphology improvement.

Citation Download Citation

Qian Feng, Li-mei Li, Yue Hao, and Zhi-wei Bi "The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751814 (12 October 2009); https://doi.org/10.1117/12.845422

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