12 October 2009 Numerical modeling of thermionic electrons in abrupt isotype heterojunction for the light emitting transistor
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Abstract
Light can emit from light emitting transistor of III-V materials. The pn-n+ structure of light emitting transistor, which has an additional n-n+ heterojunction between the base and electron emitter, is suggested. The base voltage can control the light output effectively. The functional principle of light emitting transistor is illuminated. A model about the abrupt isotype heterojunction in the base has been utilized to describe thermionic electron transport, current density and potential barrier in such a device. The model is used to explain the underlying mechanisms of the present devices.
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Huaxiong Zhao, Huaxiong Zhao, Zhiyou Guo, Zhiyou Guo, Kun Zeng, Kun Zeng, Xiaoqi Gao, Xiaoqi Gao, } "Numerical modeling of thermionic electrons in abrupt isotype heterojunction for the light emitting transistor", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75181C (12 October 2009); doi: 10.1117/12.841121; https://doi.org/10.1117/12.841121
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